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512k x 36/1m x 18 pipelined sram cy7c1380b cy7c1382b cypress semiconductor corporation ? 3901 north first street san jose ca 95134 408-943-2600 october 8, 2001 380b features ? fast clock speed: 200, 167, 150, 133 mhz provide high-performance 3-1-1-1 access rate fast oe access times: 3.0, 3.4, 3.8, and 4.2 ns optimal for depth expansion 3.3v (?5% / +10%) power supply common data inputs and data outputs byte write enable and global write control chip enable for address pipeline address, data, and control registers internally self-timed write cycle burst control pins (interleaved or linear burst se- quence) automatic power-down available using zz mode or ce deselect high-density, high-speed packages jtag boundary scan for bga packaging version functional description the cypress synchronous burst sram family employs high-speed, low-power cmos designs using advanced sin- gle-layer polysilicon, triple-layer metal technology. each mem- ory cell consists of six transistors. the cy7c1380b and cy7c1382b srams integrate 524,288x36 and 1,048,576x18 sram cells with advanced synchronous peripheral circuitry and a 2-bit counter for inter- nal burst operation. all synchronous inputs are gated by reg- isters controlled by a positive-edge-triggered clock input (clk). the synchronous inputs include all addresses, all data inputs, address-pipelining chip enable (ce ), burst control in- puts (adsc , adsp , and adv ), write enables (bw a, bw b, bw c, bw d and bwe ), and global write (gw ). asynchronous inputs include the output enable (oe ) and burst mode control (mode). dq a,b,c,d and dp a,b,c,d apply to cy7c1380b and dq a,b and dp a,b apply to cy7c1382b. a, b, c, d each are 8 bits wide in the case of dq and 1 bit wide in the case of dp. addresses and chip enables are registered with either ad- dress status processor (adsp ) or address status controller (adsc ) input pins. subsequent burst addresses can be inter- nally generated as controlled by the burst advance pin (adv ). address, data inputs, and write controls are registered on-chip to initiate self-timed write cycle. write cycles can be one to four bytes wide as controlled by the write control inputs. individual byte write allows individual byte to be written. bw a controls dqa and dpa. bw b controls dq b and dp b . bw c con- trols dqc and dpc. bw d controls dqd and dpd. bw a, bw b, bw c, and bw d can be active only with bwe being low. gw being low causes all bytes to be written. write pass-through capability allows written data available at the out- put for the immediately next read cycle. this device also in- corporates pipelined enable circuit for easy depth expansion without penalizing system performance. all inputs and outputs of the cy7c1380b and the cy7c1382b are jedec standard jesd8-5 compatible. selection guide 200 mhz 167 mhz 150 mhz 133 mhz maximum access time (ns) 3.0 3.4 3.8 4.2 maximum operating current (ma) commercial 315 285 265 245 maximum cmos standby current (ma) 20 20 20 20
cy7c1380b cy7c1382b 2 logic block diagram cy7c1380b - 512k x 36 logic block diagram cy7c1382b - 1m x 18 clk adv adsc a [18:0] gw bwe bw d bw c bw b bw a ce 1 ce 3 ce 2 oe zz burst counter address register output registers input registers 512kx36 memory array clk clk q 0 q 1 q d ce ce clr sleep control 36 36 19 17 17 19 (a [1;0] ) 2 mode adsp dq a,b,c,d dp a,b dq d , dp d bytewrite registers dq dq c , dp c bytewrite registers dq dq dq b , dp b bytewrite registers dq a , dp a bytewrite registers dq enable ce register dq enable delay register dq clk adv adsc a [19:0] gw bwe bw b bw a ce 1 ce 3 ce 2 oe zz burst counter address register output registers input registers memory array clk clk q 0 q 1 q d ce ce clr sleep control 18 18 19 17 17 19 (a [1;0] ) 2 mode adsp dq a,b dp a,b dq b , dp b bytewrite registers dq dq a , dp a bytewrite registers dq enable ce register dq enable delay register dq ce 1m x 18
cy7c1380b cy7c1382b 3 pin configurations a a a a a 1 a 0 nc nc v ss v dd a a a a a a a a a nc nc v ddq v ssq nc dpa dqa dqa v ssq v ddq dqa dqa v ss nc v dd zz dqa dqa v ddq v ssq dqa dqa nc nc v ssq v ddq nc nc nc nc nc nc v ddq v ssq nc nc dqb dqb v ssq v ddq dqb dqb v dd nc v ss dqb dqb v ddq v ssq dqb dqb dpb nc v ssq v ddq nc nc nc a a ce 1 ce 2 nc nc bwb bwa ce 3 v dd v ss clk gw bwe oe adsc adsp adv a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 mode cy7c1382b (1m x 18) nc a a a a a 1 a 0 nc nc v ss v dd a a a a a a a a a dqpb dqb dqb v ddq v ssq dqb dqb dqb dqb v ssq v ddq dqb dqb v ss nc v dd zz dqa dqa v ddq v ssq dqa dqa dqa dqa v ssq v ddq dqa dqa dqpa dqpc dqc dqc v ddq v ssq dqc dqc dqc dqc v ssq v ddq dqc dqc v dd nc v ss dqd dqd v ddq v ssq dqd dqd dqd dqd v ssq v ddq dqd dqd dqpd a a ce 1 ce 2 bwd bwc bwb bwa ce 3 v dd v ss clk gw bwe oe adsc adsp adv a a 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 80 79 78 77 76 75 74 73 72 71 70 69 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81 mode cy7c1380b (512k x 36) nc a 100-pin tqfp (top view)
cy7c1380b cy7c1382b 4 pin configurations (continued) 2 3 4 5 6 7 1 a b c d e f g h j k l m n p r t u v ddq nc nc dpc dqc dqd dqc dqd aa a a adsp v ddq a dqc v ddq dqc v ddq v ddq v ddq dqd dqd nc nc v ddq v dd clk v dd v ss v ss v ss v ss v ss v ss v ss v ss nc nc nc v dd tdo tck tdi tms 32m 64m nc v ddq v ddq v ddq aaa a a a a a a a a a0 a1 dqa dqc dqa dqa dqa dqb dqb dqb dqb dqb dqb dqb dqa dqa dqa dqa dqb v dd dqc dqc dqc v dd dqd dqd dqd dqd adsc nc ce 1 oe adv gw v ss v ss v ss v ss v ss v ss v ss v ss dpa mode dpd dpb bwb bwc nc v dd nc bwa nc bwe bwd zz 2 34 567 1 a b c d e f g h j k l m n p r t u v ddq nc nc nc dqb dqb dqb dqb aa aa adsp v ddq a nc v ddq nc v ddq v ddq v ddq nc nc nc 64m v ddq v dd clk v dd v ss v ss v ss v ss v ss v ss v ss v ss nc nc nc v dd tdo tck tdi tms a a nc v ddq v ddq v ddq a32m a a a a a a a a a a0 a1 dqa dqb nc dqa nc dqa dqa nc nc dqa nc dqa nc dqa nc dqa v dd nc dqb nc v dd dqb nc dqb nc adsc nc ce 1 oe adv gw v ss v ss v ss v ss v ss v ss v ss v ss nc mode dpb dpa v ss bwb nc v dd nc bw a nc bwe v ss zz cy7c1382b (1m x 18) cy7c1380b (512k x 36) a a bwc nc
cy7c1380b cy7c1382b 5 pin configurations (continued) cy7c1380b (512k x 36) - 11 x 15 fbga 165-ball bump fbga cy7c1382b (1m x 18) - 11 x 15 fbga 234567 1 a b c d e f g h j k l m n p r tdo nc nc nc nc dpb v dd dqb ace 1 nc ce 3 bw b bwe ace 2 nc dqb dqb mode nc dqb dqb nc nc nc 32m 64m v ddq nc bw a clk gw v ss v ss v ss v ss v ddq v ss v dd v ss v ss v ss a v ss v ss v ss v ss v ddq v ddq nc v ddq v ddq v ddq v ddq a a v dd v ss v dd v ss v ss v ddq v dd v ss v dd v ss v dd v ss v ss v ss v dd v dd v ss v dd v ss v ss nc tck a0 v ss atdi atms dqb v ss nc v ss dqb nc v ss v ss v ss v ss v ss v ss v ss a1 dqb nc nc nc v ddq v ss 8 9 10 11 a adv a adsc a oe adsp a 128m v ss v ddq nc dpa v ddq v dd nc dqa dqa nc nc nc dqa nc v dd v ddq v dd v ddq dqa v dd nc v dd nc v dd v ddq dqa v ddq v dd v dd v ddq v dd v ddq nc v ddq a a v ss aa aa dqa nc nc zz dqa nc nc dqa a v ddq 234567 1 a b c d e f g h j k l m n p r tdo nc nc dpc dqc dpd v dd dqd ace 1 bw b ce 3 bw c bwe ace 2 dqc dqd dqd mode nc dqc dqc dqd dqd dqd 32m 64m v ddq bw d bw a clk gw v ss v ss v ss v ss v ddq v ss v dd v ss v ss v ss a v ss v ss v ss v ss v ddq v ddq nc v ddq v ddq v ddq v ddq a a v dd v ss v dd v ss v ss v ddq v dd v ss v dd v ss v dd v ss v ss v ss v dd v dd v ss v dd v ss v ss nc tck a0 v ss atdi atms dqc v ss dqc v ss dqc dqc v ss v ss v ss v ss v ss v ss v ss a1 dqd dqd nc nc v ddq v ss 8 9 10 11 a adv a adsc nc oe adsp a128m v ss v ddq nc dpb v ddq v dd dqb dqb dqb nc dqb nc dqa dqa v dd v ddq v dd v ddq dqb v dd nc v dd dqa v dd v ddq dqa v ddq v dd v dd v ddq v dd v ddq dqa v ddq a a v ss aa aa dqb dqb dqb zz dqa dqa dpa dqa a v ddq
cy7c1380b cy7c1382b 6 pin definitions name i/o description a0 a1 a input- synchronous address inputs used to select one of the address locations. sampled at the rising edge of the clk if adsp or adsc is active low, and ce 1, ce 2 , and ce 3 are sampled active. a [1:0] feed the 2-bit counter. bwa bwb bwc bwd input- synchronous byte write select inputs, active low. qualified with bwe to conduct byte writes to the sram. sampled on the rising edge of clk. gw input- synchronous global write enable input, active low. when asserted low on the rising edge of clk, a global write is conducted (all bytes are written, regardless of the values on bw a,b,c,d and bwe ). bwe input- synchronous byte write enable input, active low. sampled on the rising edge of clk. this signal must be asserted low to conduct a byte write. clk input-clock clock input. used to capture all synchronous inputs to the device. also used to increment the burst counter when adv is asserted low, during a burst operation. ce 1 input- synchronous chip enable 1 input, active low. sampled on the rising edge of clk. used in conjunction with ce 2 and ce 3 to select/deselect the device. adsp is ig- nored if ce 1 is high. ce 2 input- synchronous chip enable 2 input, active high. sampled on the rising edge of clk. used in conjunction with ce 1 and ce 3 to select/deselect the device.(tqfp only) ce 3 input- synchronous chip enable 3 input, active low. sampled on the rising edge of clk. used in conjunction with ce 1 and ce 2 to select/deselect the device.(tqfp only) oe input- asynchronous output enable, asynchronous input, active low. controls the direction of the i/o pins. when low, the i/o pins behave as outputs. when deasserted high, i/o pins are three-stated, and act as input data pins. oe is masked during the first clock of a read cycle when emerging from a deselected state. adv input- synchronous advance input signal, sampled on the rising edge of clk. when asserted, it automatically increments the address in a burst cycle. adsp input- synchronous address strobe from processor, sampled on the rising edge of clk. when asserted low, a is captured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. asdp is ignored when ce 1 is deasserted high. adsc input- synchronous address strobe from controller, sampled on the rising edge of clk. when asserted low, a [x:0] is captured in the address registers. a [1:0] are also loaded into the burst counter. when adsp and adsc are both asserted, only adsp is recognized. mode input pin selects burst order. when tied to gnd selects linear burst sequence. when tied to v ddq or left floating selects interleaved burst sequence. this is a strap pin and should remain static during device operation. zz input- asynchronous zz ? sleep ? input. this active high input places the device in a non-time critical ? sleep ? condition with data integrity preserved. dqa, dpa dqb, dpb dqc, dpc dqd, dpd i/o- synchronous bidirectional data i/o lines. as inputs, they feed into an on-chip data register that is triggered by the rising edge of clk. as outputs, they deliver the data contained in the memory location specified by a x during the previous clock rise of the read cycle. the direction of the pins is controlled by oe . when oe is asserted low, the pins behave as outputs. when high, dqx and dpx are placed in a three-state condition.dq a,b,c and d are 8 bits wide. dp a,b,c and d are 1 bit wide. tdo jtag serial output synchronous serial data-out to the jtag circuit. delivers data on the negative edge of tck. (bga only)
cy7c1380b cy7c1382b 7 tdi jtag serial input synchronous serial data-in to the jtag circuit. sampled on the rising edge of tck.(bga only) tms test mode select synchronous this pin controls the test access port state machine. sampled on the rising edge of tck. (bga only) tck jtag serial clock serial clock to the jtag circuit. (bga only) v dd power supply power supply inputs to the core of the device. should be connected to 3.3v ? 5% +10% power supply. v ss ground ground for the core of the device. should be connected to ground of the sys- tem. v ddq i/o power supply power supply for the i/o circuitry. should be connected to a 2.5 ? 5% ? 3.3v 10% power supply. v ssq i/o ground ground for the i/o circuitry. should be connected to ground of the system. 32m 64m 128m - no connects. reserved for address expansion. pins are not internally connect- ed. nc - no connects. pins are not internally connected. pin definitions name i/o description
cy7c1380b cy7c1382b 8 introduction functional overview all synchronous inputs pass through input registers controlled by the rising edge of the clock. all data outputs pass through output registers controlled by the rising edge of the clock. max- imum access delay from the clock rise (t co ) is 4.2 ns (133-mhz device). the cy7c1380b/cy7c1382b supports secondary cache in systems utilizing either a linear or interleaved burst sequence. the interleaved burst order supports pentium ? and i486 pro- cessors. the linear burst sequence is suited for processors that utilize a linear burst sequence. the burst order is user selectable, and is determined by sampling the mode input. accesses can be initiated with either the processor address strobe (adsp ) or the controller address strobe (adsc ). ad- dress advancement through the burst sequence is controlled by the adv input. a two-bit on-chip wraparound burst counter captures the first address in a burst sequence and automati- cally increments the address for the rest of the burst access. byte write operations are qualified with the byte write enable (bwe ) and byte write select (bw a,b,c,d for cy7c1380 and bw a,b for cy7c1382) inputs. a global write enable (gw ) overrides all byte write inputs and writes data to all four bytes. all writes are simplified with on-chip synchronous self-timed write circuitry. synchronous chip selects (ce 1 , ce 2 , ce 3 for tqfp / ce 1 for bga) and an asynchronous output enable (oe ) provide for easy bank selection and output three-state control. adsp is ignored if ce 1 is high. single read accesses this access is initiated when the following conditions are sat- isfied at clock rise: (1) adsp or adsc is asserted low, (2) chip selects are all asserted active, and (3) the write signals (gw , bwe ) are all deasserted high. adsp is ignored if ce 1 is high. the address presented to the address inputs is stored into the address advancement logic and the address register while being presented to the memory core. the cor- responding data is allowed to propagate to the input of the output registers. at the rising edge of the next clock the data is allowed to propagate through the output register and onto the data bus within 3.0 ns (200-mhz device) if oe is active low. the only exception occurs when the sram is emerging from a deselected state to a selected state, its outputs are always three-stated during the first cycle of the access. after the first cycle of the access, the outputs are controlled by the oe signal. consecutive single read cycles are supported. once the sram is deselected at clock rise by the chip select and either adsp or adsc signals, its output will three-state immediately. single write accesses initiated by adsp this access is initiated when both of the following conditions are satisfied at clock rise: (1) adsp is asserted low, and (2) chip select is asserted active. the address presented is load- ed into the address register and the address advancement logic while being delivered to the ram core. the write signals (gw , bwe , and bw x) and adv inputs are ignored during this first cycle. adsp triggered write accesses require two clock cycles to complete. if gw is asserted low on the second clock rise, the data presented to the dqx inputs is written into the corre- sponding address location in the ram core. if gw is high, then the write operation is controlled by bwe and bw x sig- nals. the cy7c1380b/cy7c1382b provides byte write capa- bility that is described in the write cycle description table. asserting the byte write enable input (bwe ) with the selected byte write (bw a,b,c,d for cy7c1380b & bw a,b for cy7c1382b) input will selectively write to only the desired bytes. bytes not selected during a byte write operation will remain unaltered. a synchronous self-timed write mechanism has been provided to simplify the write operations. because the cy7c1380b/cy7c1382b is a common i/o de- vice, the output enable (oe ) must be deasserted high before presenting data to the dq inputs. doing so will three-state the output drivers. as a safety precaution, dq are automatically three-stated whenever a write cycle is detected, regardless of the state of oe . single write accesses initiated by adsc adsc write accesses are initiated when the following condi- tions are satisfied: (1) adsc is asserted low, (2) adsp is deasserted high, (3) chip select is asserted active, and (4) the appropriate combination of the write inputs (gw , bwe , and bw x) are asserted active to conduct a write to the desired byte(s). adsc triggered write accesses require a single clock cycle to complete. the address presented to a [17:0] is loaded into the address register and the address advancement logic while being delivered to the ram core. the adv input is ig- nored during this cycle. if a global write is conducted, the data presented to the dq [x:0] is written into the corresponding ad- dress location in the ram core. if a byte write is conducted, only the selected bytes are written. bytes not selected during a byte write operation will remain unaltered. a synchronous self-timed write mechanism has been provided to simplify the write operations. because the cy7c1380b/cy7c1382b is a common i/o de- vice, the output enable (oe ) must be deasserted high before presenting data to the dq [x:0] inputs. doing so will three-state the output drivers. as a safety precaution, dq [x:0] are automat- ically three-stated whenever a write cycle is detected, regard- less of the state of oe . burst sequences the cy7c1380b/cy7c1382b provides a two-bit wraparound counter, fed by a [1:0] , that implements either an interleaved or linear burst sequence. the interleaved burst sequence is de- signed specifically to support intel ? pentium applications. the linear burst sequence is designed to support processors that follow a linear burst sequence. the burst sequence is user selectable through the mode input. asserting adv low at clock rise will automatically increment the burst counter to the next address in the burst sequence. both read and write burst operations are supported.
cy7c1380b cy7c1382b 9 sleep mode the zz input pin is an asynchronous input. asserting zz plac- es the sram in a power conservation ? sleep ? mode. two clock cycles are required to enter into or exit from this ? sleep ? mode. while in this mode, data integrity is guaranteed. accesses pending when entering the ? sleep ? mode are not considered valid nor is the completion of the operation guaranteed. the device must be deselected prior to entering the ? sleep ? mode. ce s, adsp , and adsc must remain inactive for the duration of t zzrec after the zz input returns low. interleaved burst sequence first address second address third address fourth address a [1:0]] a [1:0] a [1:0] a [1:0] 00 01 10 11 01 00 11 10 10 11 00 01 11 10 01 00 linear burst sequence first address second address third address fourth address a [1:0] a [1:0] a [1:0] a [1:0] 00 01 10 11 01 10 11 00 10 11 00 01 11 00 01 10 zz mode electrical characteristics parameter description test conditions min. max. unit i ddzz sleep mode stand- by current zz > v dd ? 0.2v 20 ma t zzs device operation to zz zz > v dd ? 0.2v 2t cyc ns t zzrec zz recovery time zz < 0.2v 2t cyc ns
cy7c1380b cy7c1382b 10 cycle descriptions [1, 2, 3, 4] next cycle add. used zz ce 3 ce 2 ce 1 adsp adsc adv oe dq write unselected none 0 x x 1 x 0 x x hi-z x unselected none 0 1 x 0 0 x x x hi-z x unselected none 0 x 0 0 0 x x x hi-z x unselected none 0 1 x 0 1 0 x x hi-z x unselected none 0 x 0 0 1 0 x x hi-z x begin read external 0 0 1 0 0 x x x hi-z x begin read external 0 0 1 0 1 0 x x hi-z read continue read next 0 x x x 1 1 0 1 hi-z read continue read next 0 x x x 1 1 0 0 dq read continue read next 0 x x 1 x 1 0 1 hi-z read continue read next 0 x x 1 x 1 0 0 dq read suspend read current 0 x x x 1 1 1 1 hi-z read suspend read current 0 x x x 1 1 1 0 dq read suspend read current 0 x x 1 x 1 1 1 hi-z read suspend read current 0 x x 1 x 1 1 0 dq read begin write current 0 x x x 1 1 1 x hi-z write begin write current 0 x x 1 x 1 1 x hi-z write begin write external 0 0 1 0 1 0 x x hi-z write continue write next 0 x x x 1 1 0 x hi-z write continue write next 0 x x 1 x 1 0 x hi-z write suspend write current 0 x x x 1 1 1 x hi-z write suspend write current 0 x x 1 x 1 1 x hi-z write zz ? sleep ? none 1 x x x x x x x hi-z x notes: 1. x = ? don't care. ? 1 = high, 0 = low. 2. write is defined by bwe , bw x, and gw . see write cycle descriptions table. 3. the dq pins are controlled by the current cycle and the oe signal. oe is asynchronous and is not sampled with the clock. 4. ce 1 , ce 2 , and ce 3 are available only in the tqfp package. bga package has a single chip select ce 1 .
cy7c1380b cy7c1382b 11 write cycle descriptions function (1380) gw bwe bw dbw cbw bbw a read 1 1xxxx read 101111 write byte 0 - dqa 1 0 1 1 1 0 write byte 1 - dqb 1 0 1 1 0 1 write bytes 1, 0 101100 write byte 2 - dqc 1 0 1 0 1 1 write bytes 2, 0 101010 write bytes 2, 1 101001 write bytes 2, 1, 0 1 0 1 0 0 0 write byte 3 - dqd 1 0 0 1 1 1 write bytes 3, 0 100110 write bytes 3, 1 100101 write bytes 3, 1, 0 1 0 0 1 0 0 write bytes 3, 2 100011 write bytes 3, 2, 0 1 0 0 0 1 0 write bytes 3, 2, 1 1 0 0 0 0 1 write all bytes 1 0 0 0 0 0 write all bytes 0 x x x x x function (1382) gw bwe bw bbw a read 1 1 x x read 1 0 1 1 write byte 0 - dq [7:0] and dp 0 1010 write byte 1 - dq [15:8] and dp 1 1001 write all bytes 1 0 0 0 write all bytes 0 x x x
cy7c1380b cy7c1382b 12 ieee 1149.1 serial boundary scan (jtag) the cy7c1380b/cy7c1382b incorporates a serial boundary scan test access port (tap) in the fbga package only. the tqfp package does not offer this functionality. this port oper- ates in accordance with ieee standard 1149.1-1900, but does not have the set of functions required for full 1149.1 compli- ance. these functions from the ieee specification are exclud- ed because their inclusion places an added delay in the critical speed path of the sram. note that the tap controller func- tions in a manner that does not conflict with the operation of other devices using 1149.1 fully compliant taps. the tap op- erates using jedec standard 3.3v i/o logic levels. disabling the jtag feature it is possible to operate the sram without using the jtag feature. to disable the tap controller, tck must be tied low (v ss ) to prevent clocking of the device. tdi and tms are inter- nally pulled up and may be unconnected. they may alternately be connected to v dd through a pull-up resistor. tdo should be left unconnected. upon power-up, the device will come up in a reset state which will not interfere with the operation of the device. test access port (tap) - test clock the test clock is used only with the tap controller. all inputs are captured on the rising edge of tck. all outputs are driven from the falling edge of tck. test mode select the tms input is used to give commands to the tap controller and is sampled on the rising edge of tck. it is allowable to leave this pin unconnected if the tap is not used. the pin is pulled up internally, resulting in a logic high level. test data-in (tdi) the tdi pin is used to serially input information into the regis- ters and can be connected to the input of any of the registers. the register between tdi and tdo is chosen by the instruc- tion that is loaded into the tap instruction register. for infor- mation on loading the instruction register, see the tap control- ler state diagram. tdi is internally pulled up and can be unconnected if the tap is unused in an application. tdi is con- nected to the most significant bit (msb) on any register. test data out (tdo) the tdo output pin is used to serially clock data-out from the registers. the e output is active depending upon the current state of the tap state machine (see tap controller state diagram). the output changes on the falling edge of tck. tdo is connected to the least significant bit (lsb) of any register. performing a tap reset a reset is performed by forcing tms high (vdd) for five ris- ing edges of tck. this reset does not affect the operation of the sram and may be performed while the sram is oper- ating. at power-up, the tap is reset internally to ensure that tdo comes up in a high-z state. ta p r e g i st e rs registers are connected between the tdi and tdo pins and allow data to be scanned into and out of the sram test circuit- ry. only one register can be selected at a time through the instruction registers. data is serially loaded into the tdi pin on the rising edge of tck. data is output on the tdo pin on the falling edge of tck. instruction register three-bit instructions can be serially loaded into the instruc- tion register. this register is loaded when it is placed between the tdi and tdo pins as shown in the tap controller block diagram. upon power-up, the instruction register is loaded with the idcode instruction. it is also loaded with the idcode instruction if the controller is placed in a reset state as de- scribed in the previous section. when the tap controller is in the captureir state, the two least significant bits are loaded with a binary "01" pattern to allow for fault isolation of the board level serial test path. bypass register to save time when serially shifting data through registers, it is sometimes advantageous to skip certain states. the bypass register is a single-bit register that can be placed between tdi and tdo pins. this allows data to be shifted through the sram with minimal delay. the bypass register is set low (vss) when the bypass instruction is executed. boundary scan register the boundary scan register is connected to all the input and output pins on the sram. several no connect (nc) pins are also included in the scan register to reserve pins for higher density devices. the x36 configuration has a xx-bit-long regis- ter, and the x18 configuration has a yy-bit-long register. the boundary scan register is loaded with the contents of the ram input and output ring when the tap controller is in the capture-dr state and is then placed between the tdi and tdo pins when the controller is moved to the shift-dr state. the extest, sample/preload and sample z instruc- tions can be used to capture the contents of the input and output ring. the boundary scan order tables show the order in which the bits are connected. each bit corresponds to one of the bumps on the sram package. the msb of the register is connected to tdi, and the lsb is connected to tdo. identification (id) register the id register is loaded with a vendor-specific, 32-bit code during the capture-dr state when the idcode command is loaded in the instruction register. the idcode is hardwired into the sram and can be shifted out when the tap controller is in the shift-dr state. the id register has a vendor code and other information described in the identification register defi- nitions table. tap instruction set eight different instructions are possible with the three-bit in- struction register. all combinations are listed in the instruction code table. three of these instructions are listed as re- served and should not be used. the other five instructions are described in detail below. the tap controller used in this sram is not fully compliant to the 1149.1 convention because some of the mandatory 1149.1 instructions are not fully implemented. the tap controller can- not be used to load address, data or control signals into the
cy7c1380b cy7c1382b 13 sram and cannot preload the input or output buffers. the sram does not implement the 1149.1 commands extest or intest or the preload portion of sample / preload; rather it performs a capture of the inputs and output ring when these instructions are executed. instructions are loaded into the tap controller during the shift-ir state when the instruction register is placed between tdi and tdo. during this state, instructions are shifted through the instruction register through the tdi and tdo pins. to execute the instruction once it is shifted in, the tap control- ler needs to be moved into the update-ir state. extest extest is a mandatory 1149.1 instruction which is to be ex- ecuted whenever the instruction register is loaded with all 0s. extest is not implemented in the tap controller, and there- fore this device is not compliant to the 1149.1 standard. the tap controller does recognize an all-0 instruction. when an extest instruction is loaded into the instruction register, the sram responds as if a sample / preload instruction has been loaded. there is one difference between the two instructions. unlike the sample / preload instruction, ex- test places the sram outputs in a high-z state. idcode the idcode instruction causes a vendor-specific, 32-bit code to be loaded into the instruction register. it also places the instruction register between the tdi and tdo pins and allows the idcode to be shifted out of the device when the tap con- troller enters the shift-dr state. the idcode instruction is loaded into the instruction register upon power-up or whenever the tap controller is given a test logic reset state. sample z the sample z instruction causes the boundary scan register to be connected between the tdi and tdo pins when the tap controller is in a shift-dr state. it also places all sram outputs into a high-z state. sample / preload sample / preload is a 1149.1 mandatory instruction. the preload portion of this instruction is not implemented, so the tap controller is not fully 1149.1 compliant. when the sample / preload instructions loaded into the instruction register and the tap controller in the capture-dr state, a snapshot of data on the inputs and output pins is cap- tured in the boundary scan register. the user must be aware that the tap controller clock can only operate at a frequency up to 10 mhz, while the sram clock operates more than an order of magnitude faster. because there is a large difference in the clock frequencies, it is possible that during the capture-dr state, an input or output will under- go a transition. the tap may then try to capture a signal while in transition (metastable state). this will not harm the device, but there is no guarantee as to the value that will be captured. repeatable results may not be possible. to guarantee that the boundary scan register will capture the correct value of a signal, the sram signal must be stabilized long enough to meet the tap controller's capture set-up plus hold times (tcs and tch). the sram clock input might not be captured correctly if there is no way in a design to stop (or slow) the clock during a sample / preload instruction. if this is an issue, it is still possible to capture all other signals and simply ignore the value of the ck and ck captured in the boundary scan register. once the data is captured, it is possible to shift out the data by putting the tap into the shift-dr state. this places the bound- ary scan register between the tdi and tdo pins. note that since the preload part of the command is not implemented, putting the tap into the update to the update-dr state while performing a sample / preload in- struction will have the same effect as the pause-dr command. bypass when the bypass instruction is loaded in the instruction reg- ister and the tap is placed in a shift-dr state, the bypass register is placed between the tdi and tdo pins. the advan- tage of the bypass instruction is that it shortens the boundary scan path when multiple devices are connected together on a board. reserved these instructions are not implemented but are reserved for future use. do not use these instructions.
cy7c1380b cy7c1382b 14 tap controller state diagram test-logic reset test-logic/ idle select dr-scan capture-dr shift-dr exit1-dr pause-dr exit2-dr update-dr select ir-scan capture-dr shift-ir exit1-ir pause-ir exit2-ir update-ir 1 0 1 1 0 1 0 1 0 0 0 1 1 1 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 1 1 note: the 0/1 next to each state represents the value at tms at the rising edge of tck.
cy7c1380b cy7c1382b 15 tap controller block diagram 0 0 1 2 . . 29 30 31 boundary scan register identification register 0 1 2 . . . . . 0 1 2 instruction register bypass register selection circuitry selection circuitry tap controller tdi tdo tck tms tap electrical characteristics over the operating range [5, 6] parameter description test conditions min. max. unit v oh1 output high voltage i oh = ? 4.0 ma 2.4 v v oh2 output high voltage i oh = ? 100 a v dd - 0.2 v v ol1 output low voltage i ol = 8.0 ma 0.4 v v ol2 output low voltage i ol = 100 a 0.2 v v ih input high voltage 1.7 v dd + 0.3 v v il input low voltage ? 0.5 0.7 v i x input load current gnd v i v ddq ? 5 5 a notes: 5. all voltage referenced to ground. 6. overshoot: v ih (ac)< v dd +1.5v for t< t tcyc /2, undershoot:v il (ac)< 0.5v for t< t tcyc /2, power-up: v ih <2.6v and v dd <2.4v and v ddq <1.4v for t<200 ms.
cy7c1380b cy7c1382b 16 tap ac switching characteristics over the operating range [7, 8] parameters description min. max unit t tcyc tck clock cycle time 100 ns t tf tck clock frequency 10 mhz t th tck clock high 40 ns t tl tck clock low 40 ns set-up times t tmss tms set-up to tck clock rise 10 ns t tdis tdi set-up to tck clock rise 10 ns t cs capture set-up to tck rise 10 ns hold times t tmsh tms hold after tck clock rise 10 ns t tdih tdi hold after clock rise 10 ns t ch capture hold after clock rise 10 ns output times t tdov tck clock low to tdo valid 20 ns t tdox tck clock high to tdo invalid 0 ns notes: 7. t cs and t ch refer to the set-up and hold time requirements of latching data from the boundary scan register. 8. test conditions are specified using the load in tap ac test conditions. tr/tf = 1 ns.
cy7c1380b cy7c1382b 17 tap timing and test conditions (a) tdo c l =20 pf z 0 =50 ? gnd 1.25v test clock test mode select tck tms test data-in tdi test data-out tdo t tcyc t tmsh t tl t th t tmss t tdis t tdih t tdov t tdox 50 ? 3.3v 0v all input pulses 1.50v
cy7c1380b cy7c1382b 18 identification register definitions instruction field 512k x 36 1m x 18 description revision number (31:28) xxxx xxxx reserved for version number device depth (27:23) 00111 01000 defines depth of sram. 512k or 1m device width (22:18) 00100 00011 defines with of the sram. x36 or x18 cypress device id (17:12) xxxxx xxxxx reserved for future use cypress jedec id (11:1) 00011100100 00011100100 allows unique identification of sram vendor id register presence (0) 1 1 indicate the presence of an id register scan register sizes register name bit size (x18) bit size (x36) instruction 3 3 bypass 1 1 id 32 32 boundary scan 51 70 identification codes instruction code description extest 000 captures the input/output ring contents. places the boundary scan register between the tdi and tdo. forces all sram outputs to high-z state. this instruction is not 1149.1 compliant. idcode 001 loads the id register with the vendor id code and places the register be- tween tdi and tdo. this operation does not affect sram operation. sample z 010 captures the input/output contents. places the boundary scan register be- tween tdi and tdo. forces all sram output drivers to a high-z state. reserved 011 do not use: this instruction is reserved for future use. sample/preload 100 captures the input/output ring contents. places the boundary scan register between tdi and tdo. does not affect the sram operation. this instruction does not implement 1149.1 preload function and is therefore not 1149.1 compliant. reserved 101 do not use: this instruction is reserved for future use. reserved 110 do not use: this instruction is reserved for future use. bypass 111 places the bypass register between tdi and tdo. this operation does not affect sram operation.
cy7c1380b cy7c1382b 19 boundary scan order (512k x 36) bit # signal name bump id bit # signal name bump id 1 a 2r 36 a 6b 2 a 3t 37 bwa 5l 3 a 4t 38 bwb 5g 4 a 5t 39 bwc 3g 5 a 6r 40 bwd 3l 6 a 3b 41 a 2b 7 a 5b 42 ce 4e 8 dqa 6p 43 a 3a 9 dqa 7n 44 a 2a 10 dqa 6m 45 dqc 2d 11 dqa 7l 46 dqc 1e 12 dqa 6k 47 dqc 2f 13 dqa 7p 48 dqc 1g 14 dqa 6n 49 dqc 1d 15 dqa 6l 50 dqc 1d 16 dqa 7k 51 dqc 2e 17 zz 7t 52 dqc 2g 18 dqb 6h 53 dqc 1h 19 dqb 7g 54 nc 5r 20 dqb 6f 55 dqd 2k 21 dqb 7e 56 dqd 1l 22 dqb 6d 57 dqd 2m 23 dqb 7h 58 dqd 1n 24 dqb 6g 59 dqd 2p 25 dqb 6e 60 dqd 1k 26 dqb 7d 61 dqd 2l 27 a 6a 62 dqd 2n 28 a 5a 63 dqd 1p 29 adv 4g 64 mode 3r 30 adsp 4a 65 a 2c 31 adsc 4b 66 a 3c 32 oe 4f 67 a 5c 33 bwe 4m 68 a 6c 34 gw 4h 69 a1 4n 35 clk 4k 70 a0 4p boundary scan order (1m x 18) bit # signal name bump id bit # signal name bump id 1 a 2r 36 dqb 2e 2 a 2t 37 dqb 2g 3 a 3t 38 dqb 1h 4 a 5t 39 nc 5r 5 a 6r 40 dqb 2k 6 a 3b 41 dqb 1l 7 a 5b 42 dqb 2m 8 dqa 7p 43 dqb 1n 9 dqa 6n 44 dqb 2p 10 dqa 6l 45 mode 3r 11 dqa 7k 46 a 2c 12 zz 7t 47 a 3c 13 dqa 6h 48 a 5c 14 dqa 7g 49 a 6c 15 dqa 6f 50 a1 4n 16 dqa 7e 51 a0 4p 17 dqa 6d 18 a 6t 19 a 6a 20 a 5a 21 adv 4g 22 adsp 4a 23 adsc 4b 24 oe 4f 25 bwe 4m 26 gw 4h 27 clk 4k 28 a 6b 29 bwa 5l 30 bwb 3g 31 a 2b 32 ce 4e 33 a 3a 34 a 2a 35 dqb 1d
cy7c1380b cy7c1382b 20 maximum ratings (above which the useful life may be impaired. for user guide- lines, not tested.) storage temperature ................................. ? 65 c to +150 c ambient temperature with power applied ............................................. ? 55 c to +125 c supply voltage on v dd relative to gnd........ ? 0.3v to +4.6v dc voltage applied to outputs in high z state [9] ................................. ? 0.5v to v ddq + 0.5v dc input voltage [9] .............................. ? 0.5v to v ddq + 0.5v current into outputs (low) .........................................20 ma static discharge voltage .......................................... >1500v (per mil-std-883, method 3015) latch-up current.................................................... >200 ma operating range range ambient temp. [10] v dd v ddq com ? l 0 c to +70 c 3.3v ? 5% / +10% 2.5v ? 5% 3.3v + 10% ind ? l ? 40 c to +85 c electrical characteristics over the operating range parameter description test conditions min. max. unit v dd power supply voltage 3.135 3.63 v v ddq i/o supply voltage 2.375 3.63 v v oh output high voltage v dd = min., i oh = ? 4.0 ma 3.3v 2.4 v v dd = min., i oh = ? 1.0 ma 2.5v 2.0 v v ol output low voltage v dd = min., i ol = 8.0 ma 3.3v 0.4 v v dd = min., i ol = 1.0 ma 2.5v 0.4 v v ih input high voltage 3.3 v 2.0 v 2.5v 1.7 v v il input low voltage [9] 3.3v ? 0.3 0.8 v 2.5v ? 0.3 0.7 v i x input load current gnd < v i < v ddq 5 a input current of mode -30 30 a input current of zz input = v ss -30 30 a i oz output leakage current gnd < v i < v ddq, output disabled 5 a i dd v dd operating supply v dd = max., i out = 0 ma, f = f max = 1/t cyc 5.0-ns cycle, 200 mhz 315 ma 6.0-ns cycle, 167 mhz 285 ma 6.7-ns cycle, 150 mhz 265 ma 7.5-ns cycle, 133 mhz 245 ma i sb1 automatic ce power-down current ? ttl inputs max. v dd , device deselected, v in > v ih or v in < v il f = f max = 1/t cyc 5.0-ns cycle, 200 mhz 140 ma 6.0-ns cycle, 167mhz 120 ma 6.7-ns cycle, 150 mhz 110 ma 7.5-ns cycle, 133 mhz 105 ma i sb2 automatic ce power-down current ? cmos inputs max. v dd , device deselected, v in < 0.3v or v in > v ddq ? 0.3v, f = 0 all speed grades 20 ma notes: 9. minimum voltage equals ? 2.0v for pulse durations of less than 20 ns. 10. t a is the temperature.
cy7c1380b cy7c1382b 21 i sb3 automatic ce power-down current ? cmos inputs max. v dd , device deselected, or v in 0.3v or v in > v ddq ? 0.3v f = f max = 1/t cyc 5.0-ns cycle, 200 mhz 110 ma 6.0-ns cycle, 167 mhz 100 ma 6.7-ns cycle, 150 mhz 90 ma 7.5-ns cycle, 133 mhz 85 ma i sb4 automatic cs power-down current ? ttl inputs max. v dd , device deselected, v in v ih or v in v il , f = 0 all speeds 50 ma electrical characteristics over the operating range (continued) parameter description test conditions min. max. unit capacitance [11] parameter description test conditions max. unit c in input capacitance t a = 25 c, f = 1mhz, v dd = 3.3v, v ddq = 3.3v 3 pf c clk clock input capacitance 3 pf c i/o input/output capacitance 3 pf ac test loads and waveforms [12] thermal resistance [11] description test conditions symbol tqfp typ. thermal resistance (junction to ambient) still air, soldered on a 4.25 x 1.125 inch, 4-lay- er printed circuit board ja 25 thermal resistance (junction to case) jc 9 notes: 11. tested initially and after any design or process changes that may affect these parameters. 12. input waveform should have a slew rate of 1 v/ns. output r=317 ? r=351 ? 5pf including jig and scope (a) (b) output r l =50 ? z 0 =50 ? v th = 1.5v 3.3v all input pulses [10] 3.0v gnd 90% 10% 90% 10% 1 v/ns 1 v/ns (c) r=351
cy7c1380b cy7c1382b 22 switching characteristics over the operating range [13, 14, 15] -200 -167 -150 -133 parameter description min. max. min. max. min. max. min. max. unit t cyc clock cycle time 5.0 6.0 6.7 7.5 ns t ch clock high 1.8 2.1 2.3 2.5 ns t cl clock low 1.8 2.1 2.3 2.5 ns t as address set-up before clk rise 1.4 1.5 1.5 1.5 ns t ah address hold after clk rise 0.4 0.5 0.5 0.5 ns t co data output valid after clk rise 3.0 3.4 3.8 4.2 ns t doh data output hold after clk rise 1.3 1.3 1.3 1.3 ns t ads adsp , adsc set-up before clk rise 1.4 1.5 1.5 1.5 ns t adh adsp , adsc hold after clk rise 0.4 0.5 0.5 0.5 ns t wes bwe , gw , bw x set-up before clk rise 1.4 1.5 1.5 1.5 ns t weh bwe , gw , bw x hold after clk rise 0.4 0.5 0.5 0.5 ns t advs adv set-up before clk rise 1.4 1.5 1.5 1.5 ns t advh adv hold after clk rise 0.4 0.5 0.5 0.5 ns t ds data input set-up before clk rise 1.4 1.5 1.5 1.5 ns t dh data input hold after clk rise 0.4 0.5 0.5 0.5 ns t ces chip enable set-up 1.4 1.5 1.5 1.5 ns t ceh chip enable hold after clk rise 0.4 0.5 0.5 0.5 ns t chz clock to high-z [14] 3.0 3.0 3.0 3.0 ns t clz clock to low-z [14] 1.3 1.3 1.3 1.3 ns t eohz oe high to output high-z [14, 15] 4.0 4.0 4.0 4.0 ns t eolz oe low to output low-z [14, 15] 00 0 0 ns t eov oe low to output valid [14] 3.0 3.4 3.8 4.2 ns notes: 13. unless otherwise noted, test conditions assume signal transition time of 2.5 ns or less, timing reference levels of 1.5v, in put pulse levels of 0 to 3.0v, and output loading of the specified i ol /i oh and load capacitance. shown in (a), (b) and (c) of ac test loads. 14. t chz , t clz , t oev , t eolz , and t eohz are specified with a load capacitance of 5 pf as in part (b) of ac test loads. transition is measured 200 mv from steady-state voltage. 15. at any given voltage and temperature, t eohz is less than t eolz and t chz is less than t clz .
cy7c1380b cy7c1382b 23 1 switching waveforms write cycle timing [4, 16, 17] notes: 16. we is the combination of bwe , bw x, and gw to define a write cycle (see write cycle descriptions table). 17. wdx stands for write data to address x. adsp clk adsc adv add ce 1 oe gw bwe ce 2 ce 3 1a data in t cyc t ch t cl t ads t adh t ads t adh t advs t advh wd1 wd2 wd3 t ah t as t ws t wh t wh t ws t ces t ceh t ces t ceh t ces t ceh 2b 3a 1a single write burst write unselected adsp ignored with ce 1 inactive ce 1 masks adsp = don ? t care = undefined pipelined write 2a 2c 2d t dh t ds high-z high-z unselected with ce 2 adv must be inactive for adsp write adsc initiated write
cy7c1380b cy7c1382b 24 read cycle timing [4, 16, 18] note: 18. rdx stands for read data from address x. switching waveforms (continued) adsp clk adsc adv add ce 1 oe gw bwe ce 2 ce 3 2a 2c 1a data out t cyc t ch t cl t ads t adh t ads t adh t advs t advh rd1 rd2 rd3 t ah t as t ws t wh t wh t ws t ces t ceh t ces t ceh t ces t ceh t co t eov 2b 2c 2d 3a 1a t oehz t doh t clz t chz single read burst read unselected adsp ignored with ce 1 inactive suspend burst ce 1 masks adsp = don ? t care = undefined pipelined read adsc initiated read unselected with ce 2
cy7c1380b cy7c1382b 25 read/write cycle timing [4, 16, 17, 18] switching waveforms (continued) adsp clk adsc adv add ce 1 oe gw bwe ce 2 ce 3 1a data in/out t cyc t ch t cl t ads t adh t ads t adh t advs t advh rd1 wd2 rd3 t ah t as t ws t wh t wh t ws t ces t ceh t ces t ceh t ces t ceh t eolz t co t eov 3a 3c 3d 1a t eohz t doh t chz single read burst read unselected adsp ignored with ce 1 inactive ce 1 masks adsp = don ? t care = undefined pipelined read out 2a in 3b out out out out single write t ds t dh 2a out
cy7c1380b cy7c1382b 26 notes: 19. device originally deselected. 20. ce is the combination of ce 2 and ce 3 . all chip selects need to be active in order to select the device. switching waveforms (continued) t as = don ? t care = undefined t clz t chz t doh clk add bwe ce 1 data in/out adsc adsp adv ce oe d(c) t cyc t ch t cl t ads t adh t ceh t ces t weh t wes t cdv pipeline timing [4, 19, 20] adsp ignored with ce 1 high rd1 rd2 rd3 rd4 wd1 wd2 wd3 wd4 1a out 2a out 3a out 4a out 1a in 2a in 3a in 4a in back to back reads adsp initiated reads adsc initiated reads
cy7c1380b cy7c1382b 27 switching waveforms (continued) oe three-state i/os t eohz t eov t eolz oe switching waveforms
cy7c1380b cy7c1382b 28 switching waveforms (continued) adsp clk adsc ce 1 ce 3 low high zz t zzs t zzrec i dd i dd (active) three-state i/os notefjdfdhfdjfdfjdjdjdjno note: 21. device must be deselected when entering zz mode. see cycle descriptions table for all possible signal conditions to deselect the device. 22. i/os are in three-state when exiting zz sleep mode. zz mode timing [4, 21, 22] ce 2 i ddzz high
cy7c1380b cy7c1382b 29 ordering information speed (mhz) ordering code package name package type operating range 200 cy7c1380b-200ac a101 100-lead thin quad flat pack commercial 167 cy7c1380b-167ac 150 cy7c1380b-150ac 133 cy7c1380b-133ac 200 cy7c1382b-200ac 167 cy7c1382b-167ac 150 cy7c1382b-150ac 133 cy7c1382b-133ac 200 cy7c1380b-200bgc bg119 119 bga 167 cy7c1380b-167bgc 150 cy7c1380b-150bgc 133 cy7c1380b-133bgc 200 cy7c1382b-200bgc 167 cy7c1382b-167bgc 150 cy7c1382b-150bgc 133 CY7C1382B-133BGC 200 cy7c1380b-200bzc bb165a 165 fbga 167 cy7c1380b-167bzc 150 cy7c1380b-150bzc 133 cy7c1380b-133bzc 200 cy7c1382b-200bzc 167 cy7c1382b-167bzc 150 cy7c1382b-150bzc 133 cy7c1382b-133bzc
pentium is a registered trademark of intel corporation. 167 cy7c1380b-167ai a101 100-lead thin quad flat pack industrial 150 cy7c1380b-150ai 133 cy7c1380b-133ai 167 cy7c1382b-167ai 150 cy7c1382b-150ai 133 cy7c1382b-133ai 167 cy7c1380b-167bgi bg119 119 bga 150 cy7c1380b-150bgi 133 cy7c1380b-133bgi 167 cy7c1382b-167bgi 150 cy7c1382b-150bgi 133 cy7c1382b-133bgi 167 cy7c1380b-167bzi bb165a 165 fbga 150 cy7c1380b-150bzi 133 cy7c1380b-133bzi 167 cy7c1382b-167bzi 150 cy7c1382b-150bzi 133 cy7c1382b-133bzi shaded areas contain advance information. document #: 38-01074-*b ordering information speed (mhz) ordering code package name package type operating range
cy7c1380b cy7c1382b 31 package diagrams 100-pin thin plastic quad flatpack (14 x 20 x 1.4 mm) a101 51-85050-a
cy7c1380b cy7c1382b 32 package diagrams (continued) 165-ball fbga (13 x 15 x 1.2 mm) bb165a 51-85122-*a
cy7c1380b cy7c1382b ? cypress semiconductor corporation, 2001. the information contained herein is subject to change without notice. cypress semico nductor corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a cypress semiconductor product. nor does it convey or imply any license unde r patent or other rights. cypress semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected t o result in significant injury to the user. the inclusion of cypress semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in do ing so indemnifies cypress semiconductor against all charges. package diagrams (continued) 119-lead fbga (14 x 22 x 2.4 mm) bg119 51-85115
cy7c1380b cy7c1382b 34 revision history document title: cy7c1380b/cy7c1382b 512k x 36/1m x 18 pipelined sram document number:38-01074 rev. ecn no. issue date orig. of change description of change ** 9/30/2000 mpr 1. new datasheet *a 3770 05/04/01 pks 1. changed i cc values 2. changed v ih values 3. changed pin capacitance values *b 3889 08/01/01 pks 1. changed v oh and v ol values to reflect new char. values 2. maximum voltage rating to 4.6v 3. modified esd voltage to 1500v 4. changed t doh to 1.3 ns 5. changed v dd range to +10%/ ? 5% 6. changed the i dd and i sb values to reflect new char values 7. added 165 fbga packaging 8. added i-temp 9. changed set-up time from 2.0 ns to 1.5 ns 10.changed leakage current from ma to a 11. changed t eohz from 3.0 ns to 4.0 ns 12. added thermal resistance table.

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